Publication
Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates
MDR Open Deposited
The halide vapor phase epitaxy of a-Ga2O3 is demonstrated for the first time. The films are twin-free, heteroepitaxially grown on sapphire (0001) substrates using gallium chloride and oxygen as precursors. The growth rate reaches approximately 150 um/h, which is over two orders of magnitude larger than those of conventional vapor phase epitaxial growth techniques. X-ray omega-2theta and pole figure measurements reveal that the film is single-crystalline (0001) a-Ga2O3 with no detectable formation of a-Ga2O3. The optical bandgap is determined from the transmittance spectrum to be 5.16 eV.
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- 08/04/2015
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- This is an author-created, un-copyedited version of an article accepted for publication/published in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.7567/APEX.8.055501.
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- 22/01/2024