Z.H. Li
(Research Center for Magnetic and Spintronic Materials/Nanostructure Analysis Group, National Institute for Materials Science)
;
H. Suto
(Research Center for Magnetic and Spintronic Materials/Magnetic Functional Device Group, National Institute for Materials Science
)
;
V. Barwal
(Research Center for Magnetic and Spintronic Materials/Magnetic Functional Device Group, National Institute for Materials Science
)
;
K. Masuda
(Research Center for Magnetic and Spintronic Materials/Spin Theory Group, National Institute for Materials Science
)
;
T.T. Sasaki
(Research Center for Magnetic and Spintronic Materials/Nanostructure Analysis Group, National Institute for Materials Science
)
;
Z.X. Chen
(Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science
)
;
H. Tajiri
(Japan Synchrotron Radiation Research Institute (JASRI))
;
L.S.R. Kumara
(Japan Synchrotron Radiation Research Institute (JASRI))
;
T. Koganezawa
(Japan Synchrotron Radiation Research Institute (JASRI))
;
K. Amemiya
(Institute of Meterials Structure Science, KEK)
;
S. Kokado
(Shizuoka University)
;
K. Hono
(National Institute for Materials Science
)
;
Y. Sakuraba
(Research Center for Magnetic and Spintronic Materials/Magnetic Functional Device Group, National Institute for Materials Science
)
説明:
(abstract)Magnetic materials with negative spin polarization have attracted attention for their potential to increase the design freedom of spintronic devices. This study investigated the effects of off-stoichiometry on the atomic ordering, microstructure, and magneto-transport properties in Mn2+xV1-xGa (x = −0.2, 0, +0.2) Heusler alloy films, which are predicted to have large negative spin polarization derived from a pseudo band gap in the majority spin channel. The Mn2+xV1-xGa films epitaxially grown on MgO(001) substrates exhibits a higher degree of B2 and L21 order with increasing the Mn concentration. A high-quality L21-ordered film was achieved in the Mn-rich composition with B2 and L21 order of 0.97 and 0.86, respectively, and a saturation magnetization of 1.4 μB/f.u, which agrees the Slater-Pauling rule. Scanning transmission electron microscopy observations showed that B2 and L21 phases coexist in Mn-poor and stoichiometric films, while the L21 phase is dominant in the Mn-rich film with small amounts of Mn–V and Mn–Ga disorders, as revealed by laboratory and anomalous X-ray diffraction. Combined first-principles calculations and anisotropic magnetoresistance analysis confirm that the addition of excess Mn preserves the high spin polarization by suppressing the formation of deleterious anti-sites of V atoms occupying Mn sites. Therefore, the Mn-rich composition is promising for negatively spin-polarized charge injection in Mn2VGa-based spintronic applications.
権利情報:
キーワード: Heusler alloy, Atomic order, Magnetic properties, Spintronics, First-principles calculations
刊行年月日: 2024-06-13
出版者: Elsevier
掲載誌:
研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.4563
公開URL: https://doi.org/10.1016/j.actamat.2024.120110
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-06-24 08:30:47 +0900
MDRでの公開時刻: 2025-06-24 08:20:46 +0900
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R3_Supplimentary information_MDR.pdf
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R3_MVG paper_MDR.pdf
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application/pdf |
サイズ | 17.9MB | 詳細 |