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説明:

In Mg ion implantation doping of GaN, sequential N ion implantation reportedly changes Mg concentrations in the Mg ion-implanted region and the underlying region after activation annealing. Our atomic-resolution analyses showed that, in the Mg ion-implanted region, the N ion implantation increases the concentration of MgGa. The rest of the Mg atoms agglomerated to form clusters on the extended defects, and its concentration was also increased by the N implantation. The N implantation affected the coarsening of the defects, which cause Mg cluster formation.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: gallium nitride, atom probe tomography, transmission electron microscopy

刊行年月日: 2024-04-22

出版者: Wiley

掲載誌:

• physica status solidi (RRL) – Rapid Research Letters (ISSN: 18626254) vol. 18 issue. 9 2400074

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/pssr.202400074

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更新時刻: 2024-09-20 16:30:27 +0900

MDRでの公開時刻: 2024-09-20 16:30:27 +0900