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Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
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We investigated the effect of mask materials on the epitaxial lateral overgrowth (ELO) characteristics of alpha-Ga2O3 and developed an ELO technique that can markedly suppress abnormal growth and cracking to enable long-term growth on a wide mask, which is necessary to effectively improve the crystal quality. alpha-Ga2O3 islands with a diameter as large as approximately 25 um were grown by the developed ELO technique using polycrystalline kappa-Ga2O3. Transmission electron microscopy observation did not detect dislocations in the outermost part of the islands.
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- 24/01/2020
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- © 2020 The Japan Society of Applied Physics
This is an author-created, un-copyedited version of an article accepted for publication/published in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ab6faf.
- © 2020 The Japan Society of Applied Physics
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- 23/01/2024
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Manuscript clean pdf file(Oshima).pdf | 1.08 MB | MDR Open |
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