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説明:

We demonstrated β-Ga2O3-based doubly-clamped-beam resonators elongated along the [100] direction, fabricated by crystallographic gas etching of a (001) β-Ga2O3 substrate. The beams exhibited clear resonance behavior, with quality factors (Q) on the order of 10^4 for fundamental-mode peaks. Additionally, the effective beam-length dependence of the resonance frequency (f0) confirmed that the beams were essentially free from residual strain and yielded a Young’s modulus consistent with the value calculated from reported elastic constants. Furthermore, the f0xQ values were higher than those of resonators fabricated using transferred exfoliated β-Ga2O3 flakes, highlighting the advantage of crystallographic etching for fabricating β-Ga2O3 microelectromechanical systems (MEMS).

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Ga2O3, MEMS

刊行年月日: 2026-11-01

出版者: IOP Publishing

掲載誌:

• Applied Physics Express (ISSN: 18820778) vol. 19 issue. 11 116501

研究助成金:

• JSPS JP24K01368

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.35848/1882-0786/aebde4

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更新時刻: 2026-11-12 10:19:40 +0900

MDRでの公開時刻: 2026-11-12 12:44:12 +0900