Dataset: High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond
Filename: Advanced Science - 2024 - Liao - High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect.pdf (Thumbnail) Download
Content type: application/pdf
Size: 1.94 MB
Checksum: 01e70cbf6eaeb55455f79c2413d0ef77