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Description:

Here, electronic-grade phosphorus-doped n-type diamond epilayer with anatomically flat surface based on step-flow nucleation mode is fabricated. Consequently, n-channel diamond MOSFETs are demonstrated. The n-type diamond MOSFETs exhibit a high field-effect mobility around150 cm2 /V-sec at 573 K, which is the highest among all the n-channel MOSFETs based on wide-bandgap semiconductors. This work enables the development of energy-efficient and high-reliability CMOS integrated circuits for high-power electronics, integrated spintronics, and extreme sensors under harsh environments.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Diamond, n-type, MOSFET

Date published: 2024-01-19

Publisher: Wiley

Journal:

• Advanced Science (ISSN: 21983844) vol. 11 issue. 13

Funding:

• Japan Society for the Promotion of Science 20H02212
• Japan Society for the Promotion of Science 22K18957
• Japan Society for the Promotion of Science 15H03999

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1002/advs.202306013

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Updated at: 2024-04-09 16:30:23 +0900

Published on MDR: 2024-04-09 16:30:23 +0900