Download file (1.94MB)
Download as zip (1.53MB)

コレクション

引用

説明:

Here, electronic-grade phosphorus-doped n-type diamond epilayer with anatomically flat surface based on step-flow nucleation mode is fabricated. Consequently, n-channel diamond MOSFETs are demonstrated. The n-type diamond MOSFETs exhibit a high field-effect mobility around150 cm2 /V-sec at 573 K, which is the highest among all the n-channel MOSFETs based on wide-bandgap semiconductors. This work enables the development of energy-efficient and high-reliability CMOS integrated circuits for high-power electronics, integrated spintronics, and extreme sensors under harsh environments.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Diamond, n-type, MOSFET

刊行年月日: 2024-01-19

出版者: Wiley

掲載誌:

• Advanced Science (ISSN: 21983844) vol. 11 issue. 13

研究助成金:

• Japan Society for the Promotion of Science 20H02212
• Japan Society for the Promotion of Science 22K18957
• Japan Society for the Promotion of Science 15H03999

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/advs.202306013

関連資料:

その他の識別子:

連絡先:

更新時刻: 2024-04-09 16:30:23 +0900

MDRでの公開時刻: 2024-04-09 16:30:23 +0900