All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality

ジャーナル論文

著者

Keigo Nakamura (author) (この著者で検索)

Keigo Nakamura ;

Naoka Nagamura (author) (この著者で検索)

https://orcid.org/0000-0002-7697-8983

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Naoka Nagamura ;

Keiji Ueno (author) (この著者で検索)

Keiji Ueno ;

Takashi Taniguchi (author) (この著者で検索)

https://orcid.org/0000-0002-1467-3105

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Takashi Taniguchi ;

Kenji Watanabe (author) (この著者で検索)

https://orcid.org/0000-0003-3701-8119

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Kenji Watanabe ;

Kosuke Nagashio (author) (この著者で検索)

Kosuke Nagashio

キーワード

All 2D heterostructure devices, Band to band tunneling, Negative differential resistance, Subthreshold swing, Type III band alignment

刊行年月日

2020-11-18

更新時刻

2024-12-10 16:56:20 +0900