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Van der Waals heterostructure is the ideal material platform in the tunnel field effect transistors (TFET), because the band-to-band tunneling (BTBT) dominant current at the room temperature (RT) can be feasible due to the ideally dangling bond free heterointerface. However, the subthreshold swing (SS) lower than 60 mV/dec of the Boltzmann limit is still challenging. In this work, we systematically study the band alignment and heterointerface quality in the n-MoS2 channel heterostructure TFET. By selecting the p+-MoS2 source with the sufficiently high doping level, the stable gate modulation to type III band alignment was achieved regardless of the number of the MoS2 channel layers. For the gate stack formation, it is revealed that the top gate deposition of Al2O3 introduces the defect states for generation current at the reverse bias while the integration of h-BN top gate provides the defect-free clean interface, resulting in the BTBT dominant current even at RT. All 2D heterostructure TFET produced by combing the type III n-MoS2/p+-MoS2 heterostructure with h-BN top gate insulator, SS < 60 mV/dec was achieved at RT.

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• In Copyright
  This document is the Accepted Manuscript version of a Published Work that appeared in final form in All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality, copyright © 2020 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.0c13233

Keyword: All 2D heterostructure devices, Band to band tunneling, Negative differential resistance, Subthreshold swing, Type III band alignment

Date published: 2020-11-18

Publisher: American Chemical Society (ACS)

Journal:

• ACS Applied Materials & Interfaces (ISSN: 19448252) vol. 12 issue. 46 p. 51598-51606

Funding:

• Ministry of Education, Culture, Sports, Science and Technology JPMXP0112101001
• Core Research for Evolutional Science and Technology JPMJCR15F3
• Precursory Research for Embryonic Science and Technology JPMJPR17NB
• Canon Foundation for Scientific Research
• Japan Society for the Promotion of Science 18H03864
• Japan Society for the Promotion of Science 19H02561
• Japan Society for the Promotion of Science 19K21956
• Japan Society for the Promotion of Science JP19H00755
• Japan Society for the Promotion of Science JP20H00354
• Samco Science and Technology Foundation

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5130

First published URL: https://doi.org/10.1021/acsami.0c13233

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Updated at: 2024-12-10 16:56:20 +0900

Published on MDR: 2024-12-10 16:56:20 +0900