Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination

論文

著者

Takayoshi Oshima ; Masataka Imura ; Yuichi Oshima

キーワード

GaN, AlInN, etching, positive bevel edge termination

刊行年月日

2024-08-01

更新時刻

2024-08-02 12:30:52 +0900