Study of Local Band Bending in n-Channel In2O3 Thin-Film Transistors under Gate and Drain Voltage Stress Using Operando Hard X-ray Photoelectron Spectroscopy
- ジャーナル論文
- 著者
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Ibrahima Gueye (author) (この著者で検索)
https://orcid.org/0000-0001-5296-3894
(unauthenticated)
;
;Akira Yasui (author) (この著者で検索)Yasumasa Takagi (author) (この著者で検索)
https://orcid.org/0000-0001-8064-3345
(unauthenticated)
;
;Atsushi Ogura (author) (この著者で検索)Osami Sakata (author) (この著者で検索)
https://orcid.org/0000-0003-2626-0161
(unauthenticated)
;
Takahiro Nagata (author) (この著者で検索)
- キーワード
- hard X-ray photoelectron spectroscopy, Indium oxide, operando, oxide thin-film transistor, oxide semiconductor
- 刊行年月日
- 2025-09-24
- 更新時刻
- 2026-04-30 12:01:11 +0900
Effects of interface formation process on electronic properties of n-type Ti0.3Zn0.7O1.3/p-type Si stack structure
- ジャーナル論文
- 著者
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;Kenta Ogawa (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials GroupToyohiro Chikyow (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/LSTC Materials Research Lab
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;Yuki Daimon (author) (この著者で検索)Meiji University;Atsushi Ogura (author) (この著者で検索)Meiji UniversityTakahiro Nagata (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
- キーワード
- oxide semiconductor, tunnel field effect transistor, combinatorial method, interface
- 刊行年月日
- 2025-05-19
- 更新時刻
- 2026-02-14 20:23:13 +0900