Download all files (3.91MB)

コレクション

引用

説明:

In this study, we analyze In2O3 thin-film transistors (In2O3-TFT) using synchrotron-based hard X-ray photoelectron spectroscopy (HAXPES) in operando conditions. A bottom-gate In2O3-TFT with a high-k Al2O3 gate dielectric, grown on thermally oxidized silicon (SiO2/p+-Si), was examined while operating at varying VGS and VDS. The results reveal that the In 3d core level binding energy varies along the horizontal channel length, driven by the potential gradient induced by VDS. Furthermore, the polarity of VGS under positive VDS significantly affects the channel structure, and VDS influences the vertical electrostatic potential in the buried
gate dielectric and the gate electrode. Analysis suggests that the primary source of drain-source leakage current (IDSS) arises from high intrinsic electron and defect/trap levels associated with
oxygen vacancies (VO2+). Additionally, investigation beneath the Au/Ti drain and source electrodes under different bias voltages reveals substantial In2O3 reduction, leading to significant indium metal (In0) formation. Schematic models of carrier transport mechanisms are proposed to explain these findings.

権利情報:

• In Copyright
  

  This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © 2025 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.5c13299.

キーワード: hard X-ray photoelectron spectroscopy, Indium oxide, operando, oxide thin-film transistor, oxide semiconductor

刊行年月日: 2025-09-24

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Applied Materials & Interfaces (ISSN: 19448244) vol. 17 issue. 38 p. 54241-54253

研究助成金:

• Japan Society for the Promotion of Science JP18J22998
• Japan Society for the Promotion of Science JP20H02189

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5973

公開URL: https://doi.org/10.1021/acsami.5c13299

関連資料:

その他の識別子:

連絡先:

更新時刻: 2026-04-30 12:01:11 +0900

MDRでの公開時刻: 2026-09-09 08:25:15 +0900