In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition
- ジャーナル論文
- 著者
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;Akihiro Shimada (author) (この著者で検索);Haruna Shiomi (author) (この著者で検索)Tetsuya Tohei (author) (この著者で検索)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
;
Yusuke Hayashi (author) (この著者で検索)
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;Masaya Yamaguchi (author) (この著者で検索)Junpei Yamamoto (author) (この著者で検索)
https://orcid.org/0009-0007-5684-0569
(unauthenticated)
;
Takeaki Hamachi (author) (この著者で検索)
https://orcid.org/0000-0002-0631-1729
(unauthenticated)
;
Yasuhiko Imai (author) (この著者で検索)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
;
;Kazushi Sumitani (author) (この著者で検索)Shigeru Kimura (author) (この著者で検索)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
;
Shota Kaneki (author) (この著者で検索)
https://orcid.org/0000-0003-0806-8571
(unauthenticated)
;
Tamotsu Hashizume (author) (この著者で検索)
https://orcid.org/0009-0004-8229-9460
(unauthenticated)
;
Akira Sakai (author) (この著者で検索)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- キーワード
- GaN, HEMT, Strain, In situ
- 刊行年月日
- 2025-08-21
- 更新時刻
- 2025-08-23 08:30:23 +0900
Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction
- ジャーナル論文
- 著者
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T. Hamachi (author) (この著者で検索)
https://orcid.org/0000-0002-0631-1729
(unauthenticated)
;
T. Tohei (author) (この著者で検索)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
;
Y. Hayashi (author) (この著者で検索)
;
S. Usami (author) (この著者で検索)
https://orcid.org/0000-0002-9710-1718
(unauthenticated)
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;M. Imanishi (author) (この著者で検索);Y. Mori (author) (この著者で検索);K. Sumitani (author) (この著者で検索)Y. Imai (author) (この著者で検索)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
;
S. Kimura (author) (この著者で検索)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
;
A. Sakai (author) (この著者で検索)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- キーワード
- GaN, Dislocation, SPring-8
- 刊行年月日
- 2024-06-14
- 更新時刻
- 2024-12-05 12:47:52 +0900
Degradation of vertical GaN diodes during proton and xenon-ion irradiation
- ジャーナル論文
- 著者
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;Hironori Okumura (author) (この著者で検索);Yohei Ogawara (author) (この著者で検索);Manabu Togawa (author) (この著者で検索);Masaya Miyahara (author) (この著者で検索);Tadaaki Isobe (author) (この著者で検索);Kosuke Itabashi (author) (この著者で検索);Jiro Nishinaga (author) (この著者で検索)Masataka Imura (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Schottky barrier diode, MOCVD, Vertical-type PN junction diode, Proton, Xe, Radiation irradiations, GaN
- 刊行年月日
- 2023-06-01
- 更新時刻
- 2024-08-24 08:30:18 +0900