Vacancy-type defects introduced by mechanical polishing in ammonothermal GaN studied by a monoenergetic positron beam
- ジャーナル論文
- 著者
-
Akira Uedono (author) (この著者で検索)
https://orcid.org/0000-0001-6224-4869
(unauthenticated)
;
Shoji Ishibashi (author) (この著者で検索)
https://orcid.org/0000-0002-4896-3530
(unauthenticated)
;
Kohei Shima (author) (この著者で検索)
https://orcid.org/0000-0003-0967-141X
(unauthenticated)
;
;Shigefusa F. Chichibu (author) (この著者で検索)Kacper Sierakowski (author) (この著者で検索)
https://orcid.org/0000-0002-9447-1182
(unauthenticated)
;
Makoto Oishi (author) (この著者で検索)
https://orcid.org/0000-0003-3402-4556
(unauthenticated)
;
Noriyuki Okada (author) (この著者で検索)
https://orcid.org/0009-0002-0090-5646
(unauthenticated)
;
Takuro Nagai (author) (この著者で検索)
;
Michal Bockowski (author) (この著者で検索)
https://orcid.org/0000-0003-1616-685X
(unauthenticated)
- キーワード
- Mechanical polishing, GaN, Vacancy, Defect, Positron annihilation
- 刊行年月日
- 2026-04-12
- 更新時刻
- 2026-04-20 08:56:29 +0900
Investigation of Deep States in GaN Metal-Oxide-Semiconductor Interfaces
- ジャーナル論文
- 著者
-
Yoshihiro Irokawa (author) (この著者で検索)
;
Mamoru Usami (author) (この著者で検索)
https://orcid.org/0009-0002-3188-7380
(unauthenticated)
;
Jun Uzuhashi (author) (この著者で検索)
;
Tadakatsu Ohkubo (author) (この著者で検索)
;
Toshihide Nabatame (author) (この著者で検索)
;
Yasuo Koide (author) (この著者で検索)
- キーワード
- GaN
- 刊行年月日
- 2026-05-01
- 更新時刻
- 2026-05-13 10:14:20 +0900
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
- ジャーナル論文
- 著者
-
色川 芳宏 (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
;
大井 暁彦 (author) (この著者で検索)National Institute for Materials Science Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Nanofabrication Unit
;
生田目 俊秀 (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group
;
小出 康夫 (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
- キーワード
- GaN, hydrogen, Schottky barrier height
- 刊行年月日
- 2024-04-01
- 更新時刻
- 2024-04-10 16:30:21 +0900
Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface
- ジャーナル論文
- 著者
-
Takahiro Nagata (author) (この著者で検索)
;
Asahiko Matsuda (author) (この著者で検索)
;
Takashi Teramoto (author) (この著者で検索)
https://orcid.org/0000-0002-9368-1284
(unauthenticated)
;
Dominic Gerlach (author) (この著者で検索)
https://orcid.org/0000-0003-1859-0750
(unauthenticated)
;
Peng Shen (author) (この著者で検索)
https://orcid.org/0000-0002-1971-5490
(unauthenticated)
;
Shigenori Ueda (author) (この著者で検索)
;
Takako Kimura (author) (この著者で検索)
https://orcid.org/0009-0007-0109-4482
(unauthenticated)
;
Christian Dussarrat (author) (この著者で検索)
https://orcid.org/0009-0000-1063-6473
(unauthenticated)
;
Toyohiro Chikyow (author) (この著者で検索)
- キーワード
- gallium nitride, GaN, nitrosyl fluoride, FNO, HAXPES, defect passivation, fluorination
- 刊行年月日
- 2025-03-07
- 更新時刻
- 2025-03-26 17:26:31 +0900