キーワード: GaN
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6 件のレコードが見つかりました。

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031101_1_5.0178995.pdf
Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging
ジャーナル論文
著者
Shunsuke Yamashita (author) (この著者で検索)
ORCID ;
Sei Fukushima (author) (この著者で検索)
;
Jun Kikkawa (author) (この著者で検索)
National Institute for Materials Science (NIMS) Center for Basic Research on Materials
ORCID SAMURAI ;
Ryoji Arai (author) (この著者で検索)
;
Yuya Kanitani (author) (この著者で検索)
ORCID ;
Koji Kimoto (author) (この著者で検索)
National Institute for Materials Science (NIMS) Center for Basic Research on Materials
ORCID SAMURAI ;
Yoshihiro Kudo (author) (この著者で検索)
キーワード
defect, GaN, EELS, 4D-STEM, HAADF-STEM, ABF-STEM, HAXPES
刊行年月日
2024-03-01
更新時刻
2024-03-19 16:56:29 +0900
Shimada_transistor_nanoXRD-JAP-250704rev2-marked.pdf
In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition
ジャーナル論文
著者
Akihiro Shimada (author) (この著者で検索)
;
Haruna Shiomi (author) (この著者で検索)
;
Tetsuya Tohei (author) (この著者で検索)
ORCID ; ORCID SAMURAI ;
Masaya Yamaguchi (author) (この著者で検索)
;
Junpei Yamamoto (author) (この著者で検索)
ORCID ;
Takeaki Hamachi (author) (この著者で検索)
ORCID ;
Yasuhiko Imai (author) (この著者で検索)
ORCID ;
Kazushi Sumitani (author) (この著者で検索)
;
Shigeru Kimura (author) (この著者で検索)
ORCID ;
Shota Kaneki (author) (この著者で検索)
ORCID ;
Tamotsu Hashizume (author) (この著者で検索)
ORCID ;
Akira Sakai (author) (この著者で検索)
ORCID
キーワード
GaN, HEMT, Strain, In situ
刊行年月日
2025-08-21
更新時刻
2025-08-23 08:30:23 +0900
Wu Mater Design 2026 nanoXRD ML.pdf
Uncovering crystal structure evolution via nanobeam X-ray diffraction with a continuity-driven machine learning approach
ジャーナル論文
著者
Zhendong Wu (author) (この著者で検索)
ORCID ;
Tetsuya Tohei (author) (この著者で検索)
ORCID ; ORCID SAMURAI ;
Shigeyoshi Usami (author) (この著者で検索)
;
Masayuki Imanishi (author) (この著者で検索)
;
Yusuke Mori (author) (この著者で検索)
;
Junichi Takino (author) (この著者で検索)
;
Kazushi Sumitani (author) (この著者で検索)
;
Yasuhiko Imai (author) (この著者で検索)
ORCID ;
Shigeru Kimura (author) (この著者で検索)
ORCID ;
Akira Sakai (author) (この著者で検索)
ORCID
キーワード
GaN, nanoXRD, ML
刊行年月日
2026-02-15
更新時刻
2026-02-26 12:30:06 +0900
Wu 2025 J Appl Crystallogr nanoXRD UMAP HVPE GaN.pdf
Machine learning assisted nanobeam X-ray diffraction based analysis on hydride vapor-phase epitaxy GaN
ジャーナル論文
著者
Zhendong Wu (author) (この著者で検索)
;
Yusuke Hayashi (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Tetsuya Tohei (author) (この著者で検索)
;
Kazushi Sumitani (author) (この著者で検索)
;
Yasuhiko Imai (author) (この著者で検索)
;
Shigeru Kimura (author) (この著者で検索)
;
Akira Sakai (author) (この著者で検索)
キーワード
GaN, SPring-8, nanoXRD, Machine learning
刊行年月日
2025-08-01
更新時刻
2025-07-31 12:30:18 +0900
Okumura_2023_Jpn._J._Appl._Phys._62_064001 (1).pdf
Degradation of vertical GaN diodes during proton and xenon-ion irradiation
ジャーナル論文
著者
Hironori Okumura (author) (この著者で検索)
;
Yohei Ogawara (author) (この著者で検索)
;
Manabu Togawa (author) (この著者で検索)
;
Masaya Miyahara (author) (この著者で検索)
;
Tadaaki Isobe (author) (この著者で検索)
;
Kosuke Itabashi (author) (この著者で検索)
;
Jiro Nishinaga (author) (この著者で検索)
;
Masataka Imura (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
Schottky barrier diode, MOCVD, Vertical-type PN junction diode, Proton, Xe, Radiation irradiations, GaN
刊行年月日
2023-06-01
更新時刻
2024-08-24 08:30:18 +0900
Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_085003.pdf
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process
ジャーナル論文
著者
Yoshihiro Irokawa (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Toshihide Nabatame (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Tomomi Sawada (author) (この著者で検索)
National Institute for Materials Science
;
Manami Miyamoto (author) (この著者で検索)
;
Hiromi Miura (author) (この著者で検索)
;
Kazuhito Tsukagoshi (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Yasuo Koide (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
GaN
刊行年月日
2024-08-01
更新時刻
2024-09-02 12:30:27 +0900
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