キーワード: Gallium nitride
全ての絞り込みを解除

2 件のレコードが見つかりました。

HR-EELS2_revised.pdf
Detection limit of defect-induced strain in GaN evaluated by valence EELS and correlated structural analysis
ジャーナル論文
著者
Shunsuke Yamashita (author) (この著者で検索)
Sony Semiconductor Solutions Corporation
;
Jun Kikkawa (author) (この著者で検索)
National Institute for Materials Science Center for Basic Research on Materials/Advanced Materials Characterization Field/Electron Microscopy Group
ORCID SAMURAI ;
Susumu Kusanagi (author) (この著者で検索)
Sony Semiconductor Solutions Corporation
;
Ichiro Nomachi (author) (この著者で検索)
Sony Semiconductor Solutions Corporation
;
Ryoji Arai (author) (この著者で検索)
Sony Semiconductor Solutions Corporation
;
Yuya Kanitani (author) (この著者で検索)
Sony Semiconductor Solutions Corporation
;
Koji Kimoto (author) (この著者で検索)
National Institute for Materials Science Center for Basic Research on Materials
ORCID SAMURAI ;
Yoshihiro Kudo (author) (この著者で検索)
Sony Semiconductor Solutions Corporation
キーワード
Limit of detection, Detection threshold, Physical analysis, Gallium nitride, Valence electron energy loss spectroscopy (VEELS), Low-loss spectrum
刊行年月日
2026-01-01
更新時刻
2026-04-30 12:01:11 +0900
SangLW_Manuscript-ph-2023-01250a-revised-unmarked.docx
High Responsivity of Zero-Power-Consumption Ultraviolet Photodetector Using 2D-MoS2/i-GaN Vertical Heterojunction
ジャーナル論文
著者
Sushmitha Veeralingam (author) (この著者で検索)
;
Liwen Sang (author) (この著者で検索)
National Institute for Materials Science
ORCID ;
Hong Pang (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Renzhi Ma (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Sushmee Badhulika (author) (この著者で検索)
キーワード
Gallium nitride, Molybdenum disulfide, Photodetector, Self-powered, Vertical heterojunction, Ultraviolet detection
刊行年月日
2023-12-20
更新時刻
2024-12-14 12:30:29 +0900