7 件のレコードが見つかりました。
Probing thickness-dependent tip-induced band bending in MoS2
- ジャーナル論文
- 著者
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;Jian Liao (author) (この著者で検索)Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
Jiamin Xue (author) (この著者で検索) - キーワード
- Scanning tunneling spectroscopy (STS), Tip-induced band bending (TIBB), MoS2
- 刊行年月日
- 2025-03-01
- 更新時刻
- 2026-07-06 10:34:11 +0900
Enhanced computing performance of MoS2-based Raman-ion-gating reservoir achieved by combining reservoir states from current response and resonant Raman scattering
- ジャーナル論文
- 著者
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Yoshitaka Shingaya (author) (この著者で検索)National Institute for Materials Science
;
Daiki Nishioka (author) (この著者で検索)National Institute for Materials Science
;
Kazuya Terabe (author) (この著者で検索)National Institute for Materials Science
;
Takashi Tsuchiya (author) (この著者で検索)National Institute for Materials Science
- キーワード
- physical reservoir computing, resonant Raman scattering, MoS2, electric double layer transistor, Raman-ion-gating reservoir
- 刊行年月日
- 2025-10-23
- 更新時刻
- 2025-11-17 12:30:04 +0900
Fine structure of K-excitons in multilayers of transition metal dichalcogenides
- ジャーナル論文
- 著者
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;A O Slobodeniuk (author) (この著者で検索);Ł Bala (author) (この著者で検索);M Koperski (author) (この著者で検索);M R Molas (author) (この著者で検索);P Kossacki (author) (この著者で検索);K Nogajewski (author) (この著者で検索);M Bartos (author) (この著者で検索)K Watanabe (author) (この著者で検索)National Institute for Materials Science
;
T Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
;C Faugeras (author) (この著者で検索)M Potemski (author) (この著者で検索)
- キーワード
- MoS2, exciton states, magneto-reflectance
- 刊行年月日
- 2019-02-28
- 更新時刻
- 2025-02-23 22:49:08 +0900
Imaging quantum dot formation in MoS2 nanostructures
- ジャーナル論文
- 著者
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;S Bhandari (author) (この著者で検索);K Wang (author) (この著者で検索)K Watanabe (author) (この著者で検索)National Institute for Materials Science
;
T Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
;P Kim (author) (この著者で検索)R M Westervelt (author) (この著者で検索)
- キーワード
- MoS2, scanning probe microscope, quantum dots
- 刊行年月日
- 2018-10-19
- 更新時刻
- 2025-02-23 22:49:46 +0900
Pockels effect in CVD-grown monolayer MoS2
- ジャーナル論文
- 著者
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;Masaki Tanabe (author) (この著者で検索);Ritsuki Okukawa (author) (この著者で検索);Tomoyuki Yokouchi (author) (この著者で検索)Yasumitsu Miyata (author) (この著者で検索)
https://orcid.org/0000-0002-9733-5119
(unauthenticated)
National Institute for Materials Science
;
Yuki Shiomi (author) (この著者で検索)
- キーワード
- MoS2, Pockels effect
- 刊行年月日
- 2025-05-01
- 更新時刻
- 2026-02-14 20:32:38 +0900
Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics
- ジャーナル論文
- 著者
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Yoshiki Sakuma (author) (この著者で検索)National Institute for Materials Science
;
;Keisuke Atsumi (author) (この著者で検索)Takanobu Hiroto (author) (この著者で検索)National Institute for Materials Science
;
Jun Nara (author) (この著者で検索)National Institute for Materials Science
;
Akihiro Ohtake (author) (この著者で検索)National Institute for Materials Science
;
;Yuki Ono (author) (この著者で検索);Takashi Matsumoto (author) (この著者で検索);Yukihiro Muta (author) (この著者で検索);Kai Takeda (author) (この著者で検索);Emi Kano (author) (この著者で検索);Toshiki Yasuno (author) (この著者で検索);Xu Yang (author) (この著者で検索);Nobuyuki Ikarashi (author) (この著者で検索);Asato Suzuki (author) (この著者で検索);Michio Ikezawa (author) (この著者で検索);Shuhong Li (author) (この著者で検索);Tomonori Nishimura (author) (この著者で検索);Kaito Kanahashi (author) (この著者で検索)Kosuke Nagashio (author) (この著者で検索)
- キーワード
- MoS2, epitaxial growth, MOCVD
- 刊行年月日
- 2026-01-21
- 更新時刻
- 2026-01-29 16:30:04 +0900
Ion Migration in Monolayer Memristors
- ジャーナル論文
- 著者
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;Sotirios Papadopoulos (author) (この著者で検索);Tarun Agarwal (author) (この著者で検索);Achint Jain (author) (この著者で検索)Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
;Mathieu Luisier (author) (この著者で検索);Alexandros Emboras (author) (この著者で検索)Lukas Novotny (author) (この著者で検索)
- キーワード
- Memristors, MoS2, defect densities
- 刊行年月日
- 2022-07-08
- 更新時刻
- 2025-03-01 12:30:23 +0900