- Field-effect transistors (2)
- Carrier relaxation dynamics (1)
- Energy-resolved transport (1)
- Hot-carrier transport (1)
- Hydrogen-terminated diamond (1)
- Nonequilibrium carrier distributions (1)
- Self-aligned gate electrode (1)
- Transconductance spectroscopy (1)
- Two-dimensional semiconductors (1)
- hexagonal boron nitride (1)
Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator
- ジャーナル論文
- 著者
-
Yosuke Sasama (author) (この著者で検索)
;
Takuya Iwasaki (author) (この著者で検索)
;
Mohammad Monish (author) (この著者で検索)
;
Kenji Watanabe (author) (この著者で検索)
;
Takashi Taniguchi (author) (この著者で検索)
;
Yamaguchi Takahide (author) (この著者で検索)
- キーワード
- Hydrogen-terminated diamond, Field-effect transistors, hexagonal boron nitride, Self-aligned gate electrode
- 刊行年月日
- 2024-08-26
- 更新時刻
- 2024-09-12 16:30:45 +0900
Hot-carrier distribution spectroscopy by transconductance in two-dimensional field-effect transistors
- ジャーナル論文
- 著者
-
Katsunori Wakabayashi (author) (この著者で検索)
https://orcid.org/0000-0002-9147-9939
(unauthenticated)
National Institute for Materials Science
- キーワード
- Hot-carrier transport, Transconductance spectroscopy, Two-dimensional semiconductors, Field-effect transistors, Nonequilibrium carrier distributions, Energy-resolved transport, Carrier relaxation dynamics
- 刊行年月日
- 2026-09-30
- 更新時刻
- 2026-10-15 14:08:00 +0900