4 件のレコードが見つかりました。
Fully vertical AlN-on-SiC Schottky barrier diodes
- ジャーナル論文
- 著者
-
Hironori Okumura (author) (この著者で検索)
https://orcid.org/0000-0002-5464-9169
(unauthenticated)
;
Masataka Imura (author) (この著者で検索)
;
;Fuga Miyazawa (author) (この著者で検索)Lorenzo Mainini (author) (この著者で検索) - キーワード
- AlN, 4H-SiC, Schottky barrier diodes
- 刊行年月日
- 2024-10-01
- 更新時刻
- 2025-10-21 15:50:30 +0900
Zr-Based Contacts to n-Type AlN With Improved Performance for Power and High-Temperature Electronics
- ジャーナル論文
- 著者
-
;Zhongyunshen Zhu (author) (この著者で検索);Hridibrata Pal (author) (この著者で検索);Aditya Dev Varma (author) (この著者で検索)Masataka Imura (author) (この著者で検索)National Institute for Materials Science
;
;Hironori Okumura (author) (この著者で検索)Tomás Palacios (author) (この著者で検索)
- キーワード
- AlN, Zr-based ohmic contact, High-Temperature Electronics, High-temperature electronics, Schottky barrier diode
- 刊行年月日
- 2026-04-20
- 更新時刻
- 2026-06-19 13:22:46 +0900
[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K
- 雑誌
- コレクション
- Research Highlights
- 著者
-
International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN, MEMS, NEMS, energy storage, temperature coefficient of frequency, AlN, Si, Strain
- 刊行年月日
- 2021-07-13
- 更新時刻
- 2023-12-26 21:38:08 +0900