Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches

ジャーナル論文

著者

Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

National Institute for Materials Science Research Center for Electronic and Optical Materials

NIMS Researchers Directory SAMURAI

Takayoshi Oshima ;

Yuichi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8293-4891

National Institute for Materials Science Research Center for Electronic and Optical Materials

NIMS Researchers Directory SAMURAI

Yuichi Oshima

キーワード

Ga2O3, (-102), selective area growth, selective area etching

刊行年月日

2024-01-22

更新時刻

2025-01-25 12:30:12 +0900