High-pressure MOCVD growth of InGaN thick films toward the photovoltaic applications
- ジャーナル論文
- 著者
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Liwen Sang (author) (この著者で検索)National Institute for Materials Science
;
Meiyong Liao (author) (この著者で検索)National Institute for Materials Science
;
Masatomo Sumiya (author) (この著者で検索)National Institute for Materials Science
;
;Xuelin Yang (author) (この著者で検索)Bo Shen (author) (この著者で検索) - キーワード
- High-pressure, MOCVD, InGaN
- 刊行年月日
- 2021-12-01
- 更新時刻
- 2024-12-17 16:30:45 +0900
Analysis of In x Ga1− x N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control
- ジャーナル論文
- 著者
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Masataka Imura (author) (この著者で検索)National Institute for Materials Science
;
Takanobu Hiroto (author) (この著者で検索)National Institute for Materials Science
;
Takaaki Mano (author) (この著者で検索)National Institute for Materials Science
;
;Yuri Itokazu (author) (この著者で検索)Masafumi Jo (author) (この著者で検索)
- キーワード
- MOVPE, GaN, InN, InGaN, XRD, Superlattice
- 刊行年月日
- 2026-03-21
- 更新時刻
- 2026-04-03 09:31:08 +0900