[Research Highlights Vol.78] New Diamond Transistor Exhibits High Hole Mobility
- 雑誌
- コレクション
- Research Highlights
- 著者
-
International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (この著者で検索)National Institute for Materials Science
- キーワード
- diamond, field-effect transistor, hexagonal boron nitride, mobility, hydrogen-terminated, wide bandgap, hBN, graphite, hBN/h-BN
- 刊行年月日
- 2022-07-29
- 更新時刻
- 2023-12-26 21:47:16 +0900
Origin of Mobility Reduction in Thin a-IGZO TFTs and Its Improvement
- ジャーナル論文
- 著者
-
Hanjun Cho (author) (この著者で検索)
https://orcid.org/0009-0009-2834-8846
(unauthenticated)
;
Masatake Tsuji (author) (この著者で検索)
https://orcid.org/0000-0002-3404-6037
(unauthenticated)
;
Shigenori Ueda (author) (この著者で検索)
;
Hideo Hosono (author) (この著者で検索)
- キーワード
- a-IGZO, mobility, TFT, surface defects
- 刊行年月日
- 2026-05-22
- 更新時刻
- 2026-08-25 14:17:04 +0900