[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K
- 雑誌
- コレクション
- Research Highlights
- 著者
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International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN, MEMS, NEMS, energy storage, temperature coefficient of frequency, AlN, Si, Strain
- 刊行年月日
- 2021-07-13
- 更新時刻
- 2023-12-26 21:38:08 +0900
In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition
- ジャーナル論文
- 著者
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;Akihiro Shimada (author) (この著者で検索);Haruna Shiomi (author) (この著者で検索)Tetsuya Tohei (author) (この著者で検索)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
;
Yusuke Hayashi (author) (この著者で検索)
;
;Masaya Yamaguchi (author) (この著者で検索)Junpei Yamamoto (author) (この著者で検索)
https://orcid.org/0009-0007-5684-0569
(unauthenticated)
;
Takeaki Hamachi (author) (この著者で検索)
https://orcid.org/0000-0002-0631-1729
(unauthenticated)
;
Yasuhiko Imai (author) (この著者で検索)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
;
;Kazushi Sumitani (author) (この著者で検索)Shigeru Kimura (author) (この著者で検索)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
;
Shota Kaneki (author) (この著者で検索)
https://orcid.org/0000-0003-0806-8571
(unauthenticated)
;
Tamotsu Hashizume (author) (この著者で検索)
https://orcid.org/0009-0004-8229-9460
(unauthenticated)
;
Akira Sakai (author) (この著者で検索)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- キーワード
- GaN, HEMT, Strain, In situ
- 刊行年月日
- 2025-08-21
- 更新時刻
- 2025-08-23 08:30:23 +0900