Keyword: MOCVD

4 records found.

lim-et-al-2025-dual-step-chemical-treatment-of-wafer-scale-metal-organic-chemical-vapor-deposition-grown-monolayer.pdf
Dual-Step Chemical Treatment of Wafer-Scale Metal–Organic Chemical Vapor Deposition Grown Monolayer Molybdenum Disulfides
Article
Creator
Juhwan Lim ; Anh Tuấn Hoàng ; Zhaojun Li ; Tran Thi Ngoc Van ; Jung-In Lee ; Kihyun Lee ; Nicolas Gauriot ; Kyle Frohna ; Takashi Taniguchi SAMURAI ORCID ; Kenji Watanabe SAMURAI ORCID ; Bonggeun Shong ; Kwanpyo Kim ; Samuel D. Stranks ; Jong-Hyun Ahn ; Manish Chhowalla ; Akshay Rao
Keyword
molybdenum disulfide (MoS2)
, MOCVD, chemical treatment
Date published
2025-10-07
Updated at
2026-02-17 08:30:32 +0900

Sakuma_et_al-2026-Nature_Communications.pdf
Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics
Article
Creator
Yoshiki Sakuma SAMURAI ORCID ; Keisuke Atsumi ; Takanobu Hiroto SAMURAI ORCID ; Jun Nara SAMURAI ORCID ; Akihiro Ohtake SAMURAI ORCID ; Yuki Ono ; Takashi Matsumoto ; Yukihiro Muta ; Kai Takeda ; Emi Kano ; Toshiki Yasuno ; Xu Yang ; Nobuyuki Ikarashi ; Asato Suzuki ; Michio Ikezawa ; Shuhong Li ; Tomonori Nishimura ; Kaito Kanahashi ; Kosuke Nagashio
Keyword
MoS2, epitaxial growth, MOCVD
Date published
2026-01-21
Updated at
2026-01-29 16:30:04 +0900

Okumura_2023_Jpn._J._Appl._Phys._62_064001 (1).pdf
Degradation of vertical GaN diodes during proton and xenon-ion irradiation
Article
Creator
Hironori Okumura ; Yohei Ogawara ; Manabu Togawa ; Masaya Miyahara ; Tadaaki Isobe ; Kosuke Itabashi ; Jiro Nishinaga ; Masataka Imura SAMURAI ORCID
Keyword
GaN, Schottky barrier diode, MOCVD, Vertical-type PN junction diode, Radiation irradiations , Proton, Xe
Date published
2023-06-01
Updated at
2024-08-24 08:30:18 +0900

manuscript-liwensang-for fundamental research.pdf
High-pressure MOCVD growth of InGaN thick films toward the photovoltaic applications
Article
Creator
Liwen Sang ORCID ; Meiyong Liao SAMURAI ORCID ; Masatomo Sumiya SAMURAI ORCID ; Xuelin Yang ; Bo Shen
Keyword
High-pressure, MOCVD, InGaN
Date published
2021-12-01
Updated at
2024-12-17 16:30:45 +0900