Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination

Article

Creator

Takayoshi Oshima ; Masataka Imura ; Yuichi Oshima

Keyword

GaN, AlInN, etching, positive bevel edge termination

Date published

2024-08-01

Updated at

2024-08-02 12:30:52 +0900