2 records found. Displaying records 1 to 2.
Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by using a Monoenergetic Positron Beam
- Conference paper
- Creator
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;Akira Uedono (author) (Search by this author);Ryo Tanaka (author) (Search by this author);Shinya Takashima (author) (Search by this author);Katsunori Ueno (author) (Search by this author);Masaharu Edo (author) (Search by this author);Kohei Shima (author) (Search by this author);Shigefusa F. Chichibu (author) (Search by this author)Jun Uzuhashi (author) (Search by this author)
;
Tadakatsu Ohkubo (author) (Search by this author)
;
;Shoji Ishibashi (author) (Search by this author);Kacper Sierakowski (author) (Search by this author)Michal Bockowski (author) (Search by this author) - Keyword
- gallium nitride
- Date published
- 2025-06-04
- Updated at
- 2025-09-17 16:30:20 +0900
Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
- Conference paper
- Creator
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;Ryo Tanaka (author) (Search by this author)Fuji Electric Co., Ltd.;Shinya Takashima (author) (Search by this author)Fuji Electric Co., Ltd.;Katsunori Ueno (author) (Search by this author)Fuji Electric Co., Ltd.;Masahiro Horita (author) (Search by this author)Nagoya Univ.;Jun Suda (author) (Search by this author)Nagoya Univ.Jun Uzuhashi (author) (Search by this author)National Institute for Materials Science
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Tadakatsu Ohkubo (author) (Search by this author)National Institute for Materials Science
;
Masaharu Edo (author) (Search by this author)Fuji Electric Co., Ltd.
- Keyword
- gallium nitride, atom probe tomography, transmission electron microscopy
- Date published
- 2023-06-08
- Updated at
- 2024-04-19 12:30:23 +0900