3 records found.

AA00817730-96-10-105201-1-8.pdf
Low-noise and compact detection system using RF MEMS switch for solid-state NMR spectroscopy at cryogenic temperature: Proof-of-concept experiment
Article
Creator
Sotaro Nishioka SAMURAI ORCID ; Naoki Sakuyama ; Ken Obara ORCID ; Akiko T. Saito SAMURAI ORCID ; Mitsuharu Yashima ; Hidekazu Mukuda
Keyword
NMR, MEMS switch, Cryogenic amplifier, HEMT, Cryogenics
Date published
2025-10-01
Updated at
2026-01-15 09:32:30 +0900

Shimada_transistor_nanoXRD-JAP-250704rev2-marked.pdf
In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition
Article
Creator
Akihiro Shimada ; Haruna Shiomi ; Tetsuya Tohei ORCID ; Yusuke Hayashi SAMURAI ORCID ; Masaya Yamaguchi ; Junpei Yamamoto ORCID ; Takeaki Hamachi ORCID ; Yasuhiko Imai ORCID ; Kazushi Sumitani ; Shigeru Kimura ORCID ; Shota Kaneki ORCID ; Tamotsu Hashizume ORCID ; Akira Sakai ORCID
Keyword
GaN, HEMT, Strain, In situ
Date published
2025-08-21
Updated at
2025-08-23 08:30:23 +0900

GaN-HEMT_AlN-SiC paper_Sumiya_2.0.pdf
Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application
Article
Creator
Masatomo Sumiya SAMURAI ORCID ; Osamu Goto ; Yuki Takahara ; Yasutaka Imanaka SAMURAI ORCID ; Liwen Sang ORCID ; Noboru Fukuhara ; Taichiro Konno ; Fumimasa Horikiri ; Takeshi Kimura ; Akira Uedono ; Hajime Fujikura
Keyword
HEMT, III-V nitride semiconductor, heterointerface
Date published
2023-08-01
Updated at
2024-12-10 16:56:26 +0900