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GaN films were grown on HVPE-AlN/SiC templates by metalorganic chemical vapor deposition (MOCVD) without annealing a reactor to eliminate memory effect. Step-terrace structure and smooth surface were obtained for GaN film with a thickness of ~200 nm. Subsequently, AlGaN/GaN heterostructures for the application of high electron mobility transistors (HEMTs) with thin GaN channel were fabricated with no C or Fe-doped GaN buffer layer. The interface quality at AlGaN/GaN heterostructure was good enough for two-dimensional electron gas (2DEG) to exhibit Shubnikov-de Haas oscillation in the magnetic field at 1.8 K. The GaN HEMTs with a thin channel on the AlN/SiC templates exhibited both pinch-off character and conventional properties. In view of both the shorter epitaxial-growth time and higher thermal conduction, HVPE-AlN/SiC templates are applicable to the fabrication of GaN HEMTs by MOCVD.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

  This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to

キーワード: HEMT, III-V nitride semiconductor, heterointerface

刊行年月日: 2023-08-01

出版者: IOP Publishing

掲載誌:

• Japanese Journal of Applied Physics (ISSN: 13474065) vol. 62 issue. 8 085501

研究助成金:

• National Institute for Materials Science

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5131

公開URL: https://doi.org/10.35848/1347-4065/ace671

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更新時刻: 2024-12-10 16:56:26 +0900

MDRでの公開時刻: 2024-12-10 16:56:26 +0900