Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application

Masatomo Sumiya; Osamu Goto; Yuki Takahara; Yasutaka Imanaka; Liwen Sang; Noboru Fukuhara; Taichiro Konno; Fumimasa Horikiri; Takeshi Kimura; Akira Uedono; Hajime Fujikura

doi:10.35848/1347-4065/ace671

Article Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application

Masatomo Sumiya (National Institute for Materials Science) ; Osamu Goto ; Yuki Takahara ; Yasutaka Imanaka (National Institute for Materials Science) ; Liwen Sang (National Institute for Materials Science) ; Noboru Fukuhara ; Taichiro Konno ; Fumimasa Horikiri ; Takeshi Kimura ; Akira Uedono ; Hajime Fujikura

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Masatomo Sumiya, Osamu Goto, Yuki Takahara, Yasutaka Imanaka, Liwen Sang, Noboru Fukuhara, Taichiro Konno, Fumimasa Horikiri, Takeshi Kimura, Akira Uedono, Hajime Fujikura. Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application. Japanese Journal of Applied Physics. 2023, 62 (8), 085501. https://doi.org/10.35848/1347-4065/ace671

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GaN films were grown on HVPE-AlN/SiC templates by metalorganic chemical vapor deposition (MOCVD) without annealing a reactor to eliminate memory effect. Step-terrace structure and smooth surface were obtained for GaN film with a thickness of ~200 nm. Subsequently, AlGaN/GaN heterostructures for the application of high electron mobility transistors (HEMTs) with thin GaN channel were fabricated with no C or Fe-doped GaN buffer layer. The interface quality at AlGaN/GaN heterostructure was good enough for two-dimensional electron gas (2DEG) to exhibit Shubnikov-de Haas oscillation in the magnetic field at 1.8 K. The GaN HEMTs with a thin channel on the AlN/SiC templates exhibited both pinch-off character and conventional properties. In view of both the shorter epitaxial-growth time and higher thermal conduction, HVPE-AlN/SiC templates are applicable to the fabrication of GaN HEMTs by MOCVD.

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