2 records found. Displaying records 1 to 2.
Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor
- Journal article
- Creator
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Yosuke Sasama (author) (Search by this author)
;
Takuya Iwasaki (author) (Search by this author)
;
Masataka Imura (author) (Search by this author)
;
Kenji Watanabe (author) (Search by this author)
;
Takashi Taniguchi (author) (Search by this author)
;
Yamaguchi Takahide (author) (Search by this author)
- Keyword
- diamond, field-effect transistors, hexagonal boron nitride
- Date published
- 2025-10-06
- Updated at
- 2025-10-21 16:06:02 +0900
Reversible Polarity Control in 2D MoTe2 Field‐Effect Transistors for Complementary Logic Gate Applications
- Journal article
- Creator
-
;Byoung‐Soo Yu (author) (Search by this author);Wonsik Kim (author) (Search by this author);Jisu Jang (author) (Search by this author);Je‐Jun Lee (author) (Search by this author);Jung Pyo Hong (author) (Search by this author);Namhee Kwon (author) (Search by this author);Seunghwan Kim (author) (Search by this author);Aelim Ha (author) (Search by this author);Hong‐Kyu Kim (author) (Search by this author);Jae‐Pyoung Ahn (author) (Search by this author);Kwangsik Jeong (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
;Gunuk Wang (author) (Search by this author);Jongtae Ahn (author) (Search by this author);Soohyung Park (author) (Search by this author)Do Kyung Hwang (author) (Search by this author)
- Keyword
- Polarity control, field-effect transistors, MoTe2
- Date published
- 2024-05-15
- Updated at
- 2025-02-14 12:31:34 +0900