3 records found. Displaying records 1 to 3.
Oxygen reduction for p-type TeOx thin-film transistor
- Journal article
- Creator
-
Seiichi Kato (author) (Search by this author)
;
Masayuki Okamura (author) (Search by this author)
https://orcid.org/0009-0003-3636-6653
(unauthenticated)
MANA, NIMS
;
Tomomi Sawada (author) (Search by this author)
https://orcid.org/0000-0002-2335-4480
(unauthenticated)
MANA, NIMS
;
Toshihide Nabatame (author) (Search by this author)
;
Kazuhito Tsukagoshi (author) (Search by this author)
- Keyword
- oxide transistor, p-type TFT, TeOx, BEOL compatible, reducing agent, tungsten
- Date published
- 2026-05-25
- Updated at
- 2026-06-09 17:58:56 +0900
Influence of local structures on amorphous alumina exhibiting resistance random-access memory function
- Journal article
- Creator
-
;Masato Kubota (author) (Search by this author)Seiichi Kato (author) (Search by this author)National Institute for Materials Science
- Keyword
- ReRAM, aluminum oxide, oxygen vacancy
- Date published
- 2024-07-14
- Updated at
- 2024-08-20 12:30:28 +0900
Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory
- Journal article
- Creator
-
;Kubota, Masato (author) (Search by this author);Nigo, Seisuke (author) (Search by this author)Kitazawa, Hideaki (author) (Search by this author)
;
Harada, Yoshitomo (author) (Search by this author)
;
;Kido, Giyuu (author) (Search by this author);Hirayama, Taisei (author) (Search by this author)Kato, Seiichi (author) (Search by this author)
- Keyword
- Crystallographic defects, Random access memory, Electrical properties and parameters, First-principle calculations, electron energy loss spectroscopy, Electronic bandstructure, semiconductor structures, Resistive switching, Thermally stimulated current spectroscopy, Transmission electron microscope
- Date published
- 2012-08-01
- Updated at
- 2024-01-05 22:12:58 +0900