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Amorphous alumina resistance random-access memory is a promising candidate as a next　generation nonvolatile memory. It is intriguing that the nonvolatile memory function emerges in only amorphous samples, unlike crystalline samples. We studied local structures of amorphous alumina samples and Al2O3 polycrystalline using atomic pair distribution function measurements. Two amorphous alumina samples were prepared using anodic oxidation. Alumina material was oxidized in 0.3 M oxalic acid at 40 V, and 0.3 M phosphoric acid at 130 V. The high energy X-ray PDF measurements were performed on the amorphous samples and the polycrystalline at the BL04B2 beamline at the SPring-8 synchrotron radiation facility. We derived the Al–Al, O–O, and Al–O atomic distances for each sample. By comparing them, we revealed that the subtle difference in the local structure significantly influences the performance of a nonvolatile memory function.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: ReRAM, aluminum oxide, oxygen vacancy

刊行年月日: 2024-07-14

出版者: AIP Publishing

掲載誌:

• Journal of Applied Physics (ISSN: 00218979) p. 25102-25102 025102

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原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/5.0208486

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更新時刻: 2024-08-20 12:30:28 +0900

MDRでの公開時刻: 2024-08-20 12:30:28 +0900