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Amorphous alumina resistance random-access memory is a promising candidate as a next　generation nonvolatile memory. It is intriguing that the nonvolatile memory function emerges in only amorphous samples, unlike crystalline samples. We studied local structures of amorphous alumina samples and Al2O3 polycrystalline using atomic pair distribution function measurements. Two amorphous alumina samples were prepared using anodic oxidation. Alumina material was oxidized in 0.3 M oxalic acid at 40 V, and 0.3 M phosphoric acid at 130 V. The high energy X-ray PDF measurements were performed on the amorphous samples and the polycrystalline at the BL04B2 beamline at the SPring-8 synchrotron radiation facility. We derived the Al–Al, O–O, and Al–O atomic distances for each sample. By comparing them, we revealed that the subtle difference in the local structure significantly influences the performance of a nonvolatile memory function.

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• Creative Commons BY Attribution 4.0 International
  

Keyword: ReRAM, aluminum oxide, oxygen vacancy

Date published: 2024-07-14

Publisher: AIP Publishing

Journal:

• Journal of Applied Physics (ISSN: 00218979) p. 25102-25102 025102

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Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1063/5.0208486

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Updated at: 2024-08-20 12:30:28 +0900

Published on MDR: 2024-08-20 12:30:28 +0900