2 records found.
NF3 and F2 gas fluorination of GaN surface and Pt/GaN interface analyzed by hard X-ray photoelectron spectroscopy
- Journal article
- Creator
-
Asahiko Matsuda (author) (Search by this author)National Institute for Materials Science
;
Takashi Teramoto (author) (Search by this author)
https://orcid.org/0000-0002-9368-1284
(unauthenticated)
;
Takahiro Nagata (author) (Search by this author)National Institute for Materials Science
;
Dominic Gerlach (author) (Search by this author)
https://orcid.org/0000-0003-1859-0750
(unauthenticated)
;
Peng Shen (author) (Search by this author)
https://orcid.org/0000-0002-1971-5490
(unauthenticated)
;
Shigenori Ueda (author) (Search by this author)National Institute for Materials Science
;
;Takako Kimura (author) (Search by this author);Christian Dussarrat (author) (Search by this author)Toyohiro Chikyow (author) (Search by this author)
- Keyword
- Fluorination, Surface passivation, hard X-ray photoelectron spectroscopy, Gallium nitride
- Date published
- 2024-03-19
- Updated at
- 2026-03-19 14:27:24 +0900
High Responsivity of Zero-Power-Consumption Ultraviolet Photodetector Using 2D-MoS2/i-GaN Vertical Heterojunction
- Journal article
- Creator
-
;Sushmitha Veeralingam (author) (Search by this author)Liwen Sang (author) (Search by this author)National Institute for Materials Science
;
Hong Pang (author) (Search by this author)National Institute for Materials Science
;
Renzhi Ma (author) (Search by this author)National Institute for Materials Science
;
Sushmee Badhulika (author) (Search by this author)
- Keyword
- Gallium nitride, Molybdenum disulfide, Photodetector, Self-powered, Vertical heterojunction, Ultraviolet detection
- Date published
- 2023-12-20
- Updated at
- 2024-12-14 12:30:29 +0900