Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN
- Journal article
- Creator
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Emi Kano (author) (Search by this author)
https://orcid.org/0000-0001-6134-4980
(unauthenticated)
;
Jun Uzuhashi (author) (Search by this author)National Institute for Materials Science
;
;Koki Kobayashi (author) (Search by this author);Kosuke Ishikawa (author) (Search by this author);Kyosuke Sawabe (author) (Search by this author);Tetsuo Narita (author) (Search by this author);Kacper Sierakowski (author) (Search by this author);Michal Bockowski (author) (Search by this author)Tadakatsu Ohkubo (author) (Search by this author)National Institute for Materials Science
;
;Tetsu Kachi (author) (Search by this author)Nobuyuki Ikarashi (author) (Search by this author)
https://orcid.org/0000-0002-5575-5780
(unauthenticated)
- Keyword
- gallium nitride, atom probe tomography, transmission electron microscopy
- Date published
- 2024-04-22
- Updated at
- 2024-09-20 16:30:27 +0900
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
- Journal article
- Creator
-
Jun Uzuhashi (author) (Search by this author)National Institute for Materials Science
;
Jun Chen (author) (Search by this author)National Institute for Materials Science
;
Ashutosh Kumar (author) (Search by this author)
https://orcid.org/0000-0002-8085-1598
(unauthenticated)
National Institute for Materials Science
;
Wei Yi (author) (Search by this author)
https://orcid.org/0000-0001-5040-8416
(unauthenticated)
National Institute for Materials Science
;
Tadakatsu Ohkubo (author) (Search by this author)National Institute for Materials Science
;
;Ryo Tanaka (author) (Search by this author);Shinya Takashima (author) (Search by this author);Masaharu Edo (author) (Search by this author);Kacper Sierakowski (author) (Search by this author);Michal Bockowski (author) (Search by this author);Hideki Sakurai (author) (Search by this author);Tetsu Kachi (author) (Search by this author)Takashi Sekiguchi (author) (Search by this author)
https://orcid.org/0000-0002-7365-9979
(unauthenticated)
National Institute for Materials Science
;
Kazuhiro Hono (author) (Search by this author)National Institute for Materials Science
- Keyword
- gallium nitride, implantation, atom probe tomography, cathodoluminescence, scanning transmission electron microscopy
- Date published
- 2022-05-14
- Updated at
- 2024-01-05 22:11:22 +0900
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
- Journal article
- Creator
-
;Emi Kano (author) (Search by this author);Keita Kataoka (author) (Search by this author)Jun Uzuhashi (author) (Search by this author)National Institute for Materials Science
;
;Kenta Chokawa (author) (Search by this author);Hideki Sakurai (author) (Search by this author);Akira Uedono (author) (Search by this author);Tetsuo Narita (author) (Search by this author);Kacper Sierakowski (author) (Search by this author);Michal Bockowski (author) (Search by this author);Ritsuo Otsuki (author) (Search by this author);Koki Kobayashi (author) (Search by this author);Yuta Itoh (author) (Search by this author);Masahiro Nagao (author) (Search by this author)Tadakatsu Ohkubo (author) (Search by this author)National Institute for Materials Science
;
Kazuhiro Hono (author) (Search by this author)National Institute for Materials Science
;
;Jun Suda (author) (Search by this author);Tetsu Kachi (author) (Search by this author)Nobuyuki Ikarashi (author) (Search by this author)
- Keyword
- gallium nitride, transmission electron microscopy, atom probe tomography
- Date published
- 2022-08-14
- Updated at
- 2024-01-05 22:13:58 +0900