Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, etching, HCl
- Date published
- 2023-04-17
- Updated at
- 2024-05-29 08:30:12 +0900
Effect of temperature and HCl partial pressure on the selective area gas etching of (001) β-Ga2O3
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- β-Ga2O3, etching
- Date published
- 2023-08-01
- Updated at
- 2024-08-21 08:30:30 +0900