Keyword: atomic layer deposition
Reset all filters

2 records found. Displaying records 1 to 2.

Reset all filters
Nabatame_d-SiO2-Ga2O3 2026_ECS_J._Solid_State_Sci._Technol._15_064005.pdf
Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process
Journal article
Creator
Toshihide Nabatame (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
ORCID SAMURAI ;
Yoshihiro Irokawa (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
ORCID SAMURAI ;
Tomomi Sawada (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Hiromi Miura (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Manami Miyamoto (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Takashi Onaya (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID ;
Yasuo Koide (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI ;
Kazuhito Tsukagoshi (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID SAMURAI
Keyword
Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
Date published
2026-06-01
Updated at
2026-08-18 11:30:17 +0900
H. Che et al., J. Vac. Sci. Technol. A 44, 030402 (2026).pdf
Effects of oxidant selection for atomic layer deposition on impurity removal and crystallinity of as-grown Hf1− x Zr x O2 thin films
Journal article
Creator
Haoming Che (author) (Search by this author)
;
Takashi Onaya (author) (Search by this author)
National Institute for Materials Science
ORCID ;
Atsushi Tamura (author) (Search by this author)
;
Masaki Ishii (author) (Search by this author)
;
Hiroshi Taka (author) (Search by this author)
;
Koji Kita (author) (Search by this author)
Keyword
atomic layer deposition, ferroelectric HfO2-based thin films, oxidant, low temperature fabrication process
Date published
2026-05-01
Updated at
2026-07-14 10:27:45 +0900
Filter