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10-nm-thick Hf1-xZrxO2 (HZO) films were deposited on TiN by atomic layer deposition (ALD) at 250 °C using H2O2 or H2O as an oxidant with various exposure time. X-ray diffraction results showed that all as-grown films exhibited an overlapping peak associated with the orthorhombic (O)/tetragonal (T)/cubic (C) phases, while showing no significant peaks of the monoclinic phase. With extending oxidant exposure time, both H2O2- and H2O-based films exhibited enhanced O/T/C phases peak area and reached saturation under sufficient oxidation. In the saturated region, the O/T/C phases peak area of H2O2-based films was ~30% higher than that of H2O-based films. Carbon and nitrogen impurities were considered to remain in the films as residual precursor-ligand fragments due to incomplete reaction. With evaluation of impurity levels, both H2O2- and H2O-based HZO films exhibited a trend that crystallinity increases as impurity concentration of carbon and nitrogen decreases. Moreover, H2O2-based films had carbon and nitrogen concentrations approximately one order of magnitude lower than those of H2O-based films. These results suggest that impurity removal during the oxidation step is a critical factor for enhancing the crystallization of as-grown HZO films.

権利情報:

• In Copyright
  

  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Haoming Che, Takashi Onaya, Atsushi Tamura, Masaki Ishii, Hiroshi Taka, Koji Kita; Effects of oxidant selection for atomic layer deposition on impurity removal and crystallinity of as-grown Hf1−xZrxO2 thin films. J. Vac. Sci. Technol. A 1 May 2026; 44 (3): 030402. and may be found at https://doi.org/10.1116/6.0005362.

キーワード: atomic layer deposition, ferroelectric HfO2-based thin films, oxidant, low temperature fabrication process

刊行年月日: 2026-05-01

出版者: American Vacuum Society

掲載誌:

• Journal of Vacuum Science & Technology A (ISSN: 07342101) vol. 44 issue. 3 030402

研究助成金:

• JSPS KAKENHI JP24K17304
• JSPS KAKENHI JP24K21616
• MEXT Leading Initiative for Excellent Young Researchers JPMXS0320220213

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6404

公開URL: https://doi.org/10.1116/6.0005362

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更新時刻: 2026-07-14 10:27:45 +0900

MDRでの公開時刻: 2026-07-14 16:46:30 +0900