Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition
- Journal article
- Creator
-
Jiangwei Liu (author) (Search by this author)National Institute for Materials Science
;
Tokuyuki Teraji (author) (Search by this author)National Institute for Materials Science
;
Bo Da (author) (Search by this author)National Institute for Materials Science
;
Yasuo Koide (author) (Search by this author)National Institute for Materials Science
- Keyword
- Boron-doped diamond, MOS capacitor, MOSFET
- Date published
- 2023-03-16
- Updated at
- 2024-01-05 22:13:56 +0900
Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs
- Journal article
- Creator
-
Jiangwei Liu (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS)
;
Tokuyuki Teraji (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS)
;
Bo Da (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science (NIMS)
;
Yasuo Koide (author) (Search by this author)National Institute for Materials Science (NIMS)
- Keyword
- Boron-doped diamond
- Date published
- 2024-01-30
- Updated at
- 2024-03-19 16:57:34 +0900