2 records found.
Epitaxial configuration of unidirectionally aligned MoS2 monolayer on sapphire
- Journal article
- Creator
-
Akihiro Ohtake (author) (Search by this author)
;
Jun Nara (author) (Search by this author)
;
Yoshiki Sakuma (author) (Search by this author)
- Keyword
- transition-metal dichalcogenide, low-energy electron diffraction, epitaxial growth
- Date published
- 2026-01-14
- Updated at
- 2026-01-14 13:07:15 +0900
Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics
- Journal article
- Creator
-
Yoshiki Sakuma (author) (Search by this author)National Institute for Materials Science
;
;Keisuke Atsumi (author) (Search by this author)Takanobu Hiroto (author) (Search by this author)National Institute for Materials Science
;
Jun Nara (author) (Search by this author)National Institute for Materials Science
;
Akihiro Ohtake (author) (Search by this author)National Institute for Materials Science
;
;Yuki Ono (author) (Search by this author);Takashi Matsumoto (author) (Search by this author);Yukihiro Muta (author) (Search by this author);Kai Takeda (author) (Search by this author);Emi Kano (author) (Search by this author);Toshiki Yasuno (author) (Search by this author);Xu Yang (author) (Search by this author);Nobuyuki Ikarashi (author) (Search by this author);Asato Suzuki (author) (Search by this author);Michio Ikezawa (author) (Search by this author);Shuhong Li (author) (Search by this author);Tomonori Nishimura (author) (Search by this author);Kaito Kanahashi (author) (Search by this author)Kosuke Nagashio (author) (Search by this author)
- Keyword
- MoS2, epitaxial growth, MOCVD
- Date published
- 2026-01-21
- Updated at
- 2026-01-29 16:30:04 +0900