Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)

Journal article

Creator

Yuhua Tsai (author) (Search by this author)

https://orcid.org/0000-0001-7996-6681

Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science

Yuhua Tsai ;

Yusuke Hashimoto (author) (Search by this author)

NAIST

Yusuke Hashimoto ;

ZeXu Sun (author) (Search by this author)

NAIST

ZeXu Sun ;

Takuya Moriki (author) (Search by this author)

NAIST

Takuya Moriki ;

Takashi Tadamura (author) (Search by this author)

NAIST

Takashi Tadamura ;

Takahiro Nagata (author) (Search by this author)

https://orcid.org/0000-0002-8591-2943

Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Takahiro Nagata ;

Piero Mazzolini (author) (Search by this author)

University of Parma

Piero Mazzolini ;

Antonella Parisini (author) (Search by this author)

University of Parma

Antonella Parisini ;

Matteo Bosi (author) (Search by this author)

IMEM-CNR

Matteo Bosi ;

Luca Seravalli (author) (Search by this author)

IMEM-CNR

Luca Seravalli ;

Tomohiro Matsushita (author) (Search by this author)

NAIST

Tomohiro Matsushita ;

Yoshiyuki Yamashita (author) (Search by this author)

https://orcid.org/0000-0003-0994-8095

Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Yoshiyuki Yamashita

Keyword

Ga2O3, κ-Ga2O3

Date published

2024-04-03

Updated at

2025-03-07 12:30:11 +0900