Zr-Based Contacts to n-Type AlN With Improved Performance for Power and High-Temperature Electronics
- Journal article
- Creator
-
;Zhongyunshen Zhu (author) (Search by this author);Hridibrata Pal (author) (Search by this author);Aditya Dev Varma (author) (Search by this author)Masataka Imura (author) (Search by this author)National Institute for Materials Science
;
;Hironori Okumura (author) (Search by this author)Tomás Palacios (author) (Search by this author) - Keyword
- AlN, Zr-based ohmic contact, High-Temperature Electronics, High-temperature electronics, Schottky barrier diode
- Date published
- 2026-04-20
- Updated at
- 2026-06-19 13:22:46 +0900
First-principles lattice thermal conductivity calculation for AlN / P6_3mc (186) / materials id 661
- Dataset
- Collection
- MDR lattice thermal conductivity calculation database
- Creator
-
Atsushi Togo (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science
- Keyword
- Lattice thermal conductivity, AlN
- Date published
- Updated at
- 2026-01-24 11:17:05 +0900
Fully vertical AlN-on-SiC Schottky barrier diodes
- Journal article
- Creator
-
Hironori Okumura (author) (Search by this author)
https://orcid.org/0000-0002-5464-9169
(unauthenticated)
;
Masataka Imura (author) (Search by this author)
;
;Fuga Miyazawa (author) (Search by this author)Lorenzo Mainini (author) (Search by this author) - Keyword
- AlN, 4H-SiC, Schottky barrier diodes
- Date published
- 2024-10-01
- Updated at
- 2025-10-21 15:50:30 +0900
[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K
- Magazine
- Collection
- Research Highlights
- Creator
-
International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (Search by this author)National Institute for Materials Science
- Keyword
- GaN, MEMS, NEMS, energy storage, temperature coefficient of frequency, AlN, Si, Strain
- Date published
- 2021-07-13
- Updated at
- 2023-12-26 21:38:08 +0900