2 件のレコードが見つかりました。
Zr-Based Contacts to n-Type AlN With Improved Performance for Power and High-Temperature Electronics
- ジャーナル論文
- 著者
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;Zhongyunshen Zhu (author) (この著者で検索);Hridibrata Pal (author) (この著者で検索);Aditya Dev Varma (author) (この著者で検索)Masataka Imura (author) (この著者で検索)National Institute for Materials Science
;
;Hironori Okumura (author) (この著者で検索)Tomás Palacios (author) (この著者で検索) - キーワード
- AlN, Zr-based ohmic contact, High-Temperature Electronics, High-temperature electronics, Schottky barrier diode
- 刊行年月日
- 2026-04-20
- 更新時刻
- 2026-06-19 13:22:46 +0900
[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K
- 雑誌
- コレクション
- Research Highlights
- 著者
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International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN, MEMS, NEMS, energy storage, temperature coefficient of frequency, AlN, Si, Strain
- 刊行年月日
- 2021-07-13
- 更新時刻
- 2023-12-26 21:38:08 +0900