3 件のレコードが見つかりました。
High Responsivity of Zero-Power-Consumption Ultraviolet Photodetector Using 2D-MoS2/i-GaN Vertical Heterojunction
- ジャーナル論文
- 著者
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;Sushmitha Veeralingam (author) (この著者で検索)Liwen Sang (author) (この著者で検索)National Institute for Materials Science
;
Hong Pang (author) (この著者で検索)National Institute for Materials Science
;
Renzhi Ma (author) (この著者で検索)National Institute for Materials Science
;
Sushmee Badhulika (author) (この著者で検索) - キーワード
- Gallium nitride, Molybdenum disulfide, Photodetector, Self-powered, Vertical heterojunction, Ultraviolet detection
- 刊行年月日
- 2023-12-20
- 更新時刻
- 2024-12-14 12:30:29 +0900
Effectiveness of fluorine termination at nitrogen vacancies inside gallium nitride crystals based on first-principles calculations
- ジャーナル論文
- 著者
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Yuki Fujishiro (author) (この著者で検索)
https://orcid.org/0009-0006-7436-2911
(unauthenticated)
;
Tomoe Yayama (author) (この著者で検索)
https://orcid.org/0000-0002-5708-8723
(unauthenticated)
;
Takahiro Nagata (author) (この著者で検索)
;
Toyohiro Chikyow (author) (この著者で検索)
;
Fumiko Akagi (author) (この著者で検索)
https://orcid.org/0000-0003-4934-8465
(unauthenticated)
- キーワード
- Gallium nitride, First-principles calculations, Fluorine termination, Nitrogen vacancies
- 刊行年月日
- 2026-02-28
- 更新時刻
- 2026-04-03 10:13:47 +0900
Detection limit of defect-induced strain in GaN evaluated by valence EELS and correlated structural analysis
- ジャーナル論文
- 著者
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;Shunsuke Yamashita (author) (この著者で検索)Sony Semiconductor Solutions CorporationJun Kikkawa (author) (この著者で検索)National Institute for Materials Science Center for Basic Research on Materials/Advanced Materials Characterization Field/Electron Microscopy Group
;
;Susumu Kusanagi (author) (この著者で検索)Sony Semiconductor Solutions Corporation;Ichiro Nomachi (author) (この著者で検索)Sony Semiconductor Solutions Corporation;Ryoji Arai (author) (この著者で検索)Sony Semiconductor Solutions Corporation;Yuya Kanitani (author) (この著者で検索)Sony Semiconductor Solutions CorporationKoji Kimoto (author) (この著者で検索)National Institute for Materials Science Center for Basic Research on Materials
;
Yoshihiro Kudo (author) (この著者で検索)Sony Semiconductor Solutions Corporation
- キーワード
- Limit of detection, Detection threshold, Physical analysis, Gallium nitride, Valence electron energy loss spectroscopy (VEELS), Low-loss spectrum
- 刊行年月日
- 2026-01-01
- 更新時刻
- 2026-04-30 12:01:11 +0900