License: In Copyright Keyword: GaN

4 records found.

Exploring the Effect of Temperature and Interface Atom Type on Heat Transport through the GaNdiamond Interfaces using Machine Learning Potential_Zhanpeng Sun-Prof. Liao.docx
Heat transport exploration through the GaN/diamond interfaces using machine learning potential
Journal article
Creator
Zhanpeng Sun (author) (Search by this author)
;
Yunfei Song (author) (Search by this author)
;
Zijun Qi (author) (Search by this author)
;
Xiang Sun (author) (Search by this author)
;
Meiyong Liao (author) (Search by this author)
ORCID SAMURAI ;
Rui Li (author) (Search by this author)
;
Qijun Wang (author) (Search by this author)
ORCID ;
Lijie Li (author) (Search by this author)
;
Gai Wu (author) (Search by this author)
ORCID ;
Wei Shen (author) (Search by this author)
;
Sheng Liu (author) (Search by this author)
Keyword
thermal conductivity, GaN, Diamond
Date published
2025-01-16
Updated at
2025-04-22 12:30:10 +0900

manuscript-R1.docx
Effect of surface vacancy defects on the phonon thermal transport across GaN/diamond interface
Journal article
Creator
Kongping Wu (author) (Search by this author)
ORCID ;
Renxiang Cheng (author) (Search by this author)
;
Leng Zhang (author) (Search by this author)
;
Wenxiu Wang (author) (Search by this author)
;
Fangzhen Li (author) (Search by this author)
; ORCID SAMURAI
Keyword
diamond, heat spreader, GaN, calculation
Date published
2024-12-19
Updated at
2025-04-22 08:30:20 +0900

APL24-AR-02539Authors.pdf
Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
Journal article
Creator
S. Yamada (author) (Search by this author)
ORCID ;
A. Fujimoto (author) (Search by this author)
;
S. Yagi (author) (Search by this author)
ORCID ;
H. Narui (author) (Search by this author)
ORCID ;
E. Yamaguchi (author) (Search by this author)
; ORCID SAMURAI
Keyword
GaN, Double Heterostructures, Hole gas, Magnetoresistance, Spin-Orbit coupling
Date published
2024-06-24
Updated at
2024-07-13 08:30:10 +0900

[Vol. 68]New GaN MEMS Resonator Is Temperature-Stable up to 600 K_ WPI-MANA.pdf
[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K
Magazine
Collection
Research Highlights
Creator
International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (Search by this author)
National Institute for Materials Science
Keyword
GaN, MEMS, NEMS, energy storage, temperature coefficient of frequency, AlN, Si, Strain
Date published
2021-07-13
Updated at
2023-12-26 21:38:08 +0900