Room-temperature bulk photovoltaic effect in a terthiophene-based ferroelectric liquid crystal bearing dilactate side chains
- Journal article
- Creator
-
;Masahiro Funahashi (author) (Search by this author)a Department of Chemical Science and Engineering, Kobe University;Yasuko Koshiba (author) (Search by this author);Shohei Horike (author) (Search by this author)Shinobu Uemura (author) (Search by this author)
- Keyword
- Bulk photovoltaic effect, ferroelectric, liquid crystalline semiconductor, oligothiophene, lactate, ferroelectric liquid crystal
- Date published
- 2025-12-31
- Updated at
- 2025-07-16 16:14:58 +0900
Raw data files for Fig. 12 Auger depth profiles in "Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam"
- Dataset
- Creator
-
OGIWARA, Toshiya (author) (Search by this author)National Institute for Materials Science
;
NAGATA, Takahiro (author) (Search by this author)National Institute for Materials Science
;
YOSHIKAWA, Hideki (author) (Search by this author)National Institute for Materials Science
- Keyword
- Auger depth profiling analysis, HfO2/Si, Ultra low angle incidence ion beam
- Date published
- 2019-03-07
- Updated at
- 2024-01-05 22:13:20 +0900
Raw data files for Fig. 11 Auger depth profiles in "Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam"
- Dataset
- Creator
-
OGIWARA, Toshiya (author) (Search by this author)National Institute for Materials Science
;
NAGATA, Takahiro (author) (Search by this author)National Institute for Materials Science
;
YOSHIKAWA, Hideki (author) (Search by this author)National Institute for Materials Science
- Keyword
- Auger depth profiling analysis, HfO2/Si, Ultra low angle incidence ion beam
- Date published
- 2019-03-07
- Updated at
- 2024-04-07 22:57:41 +0900
Raw data files for Fig. 10 Auger depth profiles in "Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam"
- Dataset
- Creator
-
OGIWARA, Toshiya (author) (Search by this author)National Institute for Materials Science
;
NAGATA, Takahiro (author) (Search by this author)National Institute for Materials Science
;
YOSHIKAWA, Hideki (author) (Search by this author)National Institute for Materials Science
- Keyword
- Auger depth profiling analysis, HfO2/Si, Ultra low angle incidence ion beam
- Date published
- 2019-03-07
- Updated at
- 2024-01-05 22:12:41 +0900
Raw data files for Fig. 9 Auger depth profiles in "Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam"
- Dataset
- Creator
-
OGIWARA, Toshiya (author) (Search by this author)National Institute for Materials Science
;
NAGATA, Takahiro (author) (Search by this author)National Institute for Materials Science
;
YOSHIKAWA, Hideki (author) (Search by this author)National Institute for Materials Science
- Keyword
- Auger depth profiling analysis, HfO2/Si, Ultra low angle incidence ion beam
- Date published
- 2019-03-07
- Updated at
- 2024-10-08 12:20:27 +0900
Raw data files for Fig. 5 Auger depth profiles in "Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam"
- Dataset
- Creator
-
OGIWARA, Toshiya (author) (Search by this author)National Institute for Materials Science
;
NAGATA, Takahiro (author) (Search by this author)National Institute for Materials Science
;
YOSHIKAWA, Hideki (author) (Search by this author)National Institute for Materials Science
- Keyword
- Auger depth profiling analysis, HfO2/Si, Ultra low angle incidence ion beam
- Date published
- 2019-03-07
- Updated at
- 2024-03-30 18:50:38 +0900
Raw data files for Fig. 6 Auger depth profiles in "Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam"
- Dataset
- Creator
-
OGIWARA, Toshiya (author) (Search by this author)National Institute for Materials Science
;
NAGATA, Takahiro (author) (Search by this author)National Institute for Materials Science
;
YOSHIKAWA, Hideki (author) (Search by this author)National Institute for Materials Science
- Keyword
- Auger depth profiling analysis, HfO2/Si, Ultra low angle incidence ion beam
- Date published
- 2019-03-07
- Updated at
- 2024-03-30 18:50:25 +0900
Raw data files for Fig. 7 Auger depth profiles in "Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam"
- Dataset
- Creator
-
OGIWARA, Toshiya (author) (Search by this author)National Institute for Materials Science
;
NAGATA, Takahiro (author) (Search by this author)National Institute for Materials Science
;
YOSHIKAWA, Hideki (author) (Search by this author)National Institute for Materials Science
- Keyword
- Auger depth profiling analysis, HfO2/Si, Ultra low angle incidence ion beam
- Date published
- 2019-03-07
- Updated at
- 2024-01-05 22:12:25 +0900
Raw data files for Fig. 8 Auger depth profiles in "Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam"
- Dataset
- Creator
-
OGIWARA, Toshiya (author) (Search by this author)National Institute for Materials Science
;
NAGATA, Takahiro (author) (Search by this author)National Institute for Materials Science
;
YOSHIKAWA, Hideki (author) (Search by this author)National Institute for Materials Science
- Keyword
- Auger depth profiling analysis, HfO2/Si, Ultra low angle incidence ion beam
- Date published
- 2019-03-07
- Updated at
- 2024-01-05 22:11:29 +0900
Electron doping of exfoliated multilayer graphene induced by dissociative H2 adsorption due to long-term exposure to 80-bar H2 gas
- Journal article
- Creator
-
;Hyun-Seok Jang (author) (Search by this author)a Department of Physics, Incheon National University;Younghun Kim (author) (Search by this author);Heewoo Lee (author) (Search by this author);Soo Bong Choi (author) (Search by this author);Jeongwoo Kim (author) (Search by this author)Byung Hoon Kim (author) (Search by this author)
- Keyword
- Multilayer graphene, high H2 pressure, dissociative H2 adsorption, hydrogen electron-doped graphene
- Date published
- 2026-12-31
- Updated at
- 2026-02-10 12:30:21 +0900