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Semiconducting graphene is expected to replace silicon in the electronics industry, and various methods have been proposed for this purpose. In this study, we demonstrate that the long-term exposure of multilayer graphene to 80 bar of molecular hydrogen induces electron doping in graphene. Ambipolarity behavior disappeared, and the current in the transfer curves decreased and increased in the negative gate voltage (Vg) and positive Vg regions, respectively. The charge neutrality point shifted from 4.18 to over −80 V. Two resonant scatterings due to hydrogen adatoms were observed in the temperature-dependent transfer curves. For multilayer graphene with a boundary (edge), different behavior was observed in the transfer characteristics. Upon exposure to 80 bar of H2 pressure, the drain current of the time-dependent transfer curve rapidly decreased; however, it increased in the positive Vg region after 60 h of exposure to H2. Structural changes, particularly an increase in C‒H bonding, were observed using various characterization methods. These results were interpreted by the dissociative H2 adsorption of graphene. Molecular dynamics simulations also revealed the presence of electron doping due to dissociative adsorption. Furthermore, the simulations confirmed that dissociative adsorption occurred on the surface layer and at vacancies and defects.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Multilayer graphene, high H2 pressure, dissociative H2 adsorption, hydrogen electron-doped graphene

刊行年月日: 2026-02-05

出版者: Taylor & Francis

掲載誌:

• Science and Technology of Advanced Materials (ISSN: 14686996) vol. 27 2627029

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6176

公開URL: https://doi.org/10.1080/14686996.2026.2627029

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更新時刻: 2026-02-10 12:30:21 +0900

MDRでの公開時刻: 2026-02-10 09:14:28 +0900