Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator

論文

著者

Yosuke Sasama ; Takuya Iwasaki ; Mohammad Monish ; Kenji Watanabe ; Takashi Taniguchi ; Yamaguchi Takahide

キーワード

Hydrogen-terminated diamond, Field-effect transistors, hexagonal boron nitride, Self-aligned gate electrode

刊行年月日

2024-08-26

更新時刻

2024-09-12 16:30:45 +0900