Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination

ジャーナル論文

著者

Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group

NIMS Researchers Directory SAMURAI

Takayoshi Oshima ;

Masataka Imura (author) (この著者で検索)

https://orcid.org/0000-0002-4236-9549

National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group

NIMS Researchers Directory SAMURAI

Masataka Imura ;

Yuichi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8293-4891

National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group

NIMS Researchers Directory SAMURAI

Yuichi Oshima

キーワード

GaN, AlInN, etching, positive bevel edge termination

刊行年月日

2024-08-01

更新時刻

2024-08-02 12:30:52 +0900