Detection limit of defect-induced strain in GaN evaluated by valence EELS and correlated structural analysis
- ジャーナル論文
- 著者
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;Shunsuke Yamashita (author) (この著者で検索)Sony Semiconductor Solutions CorporationJun Kikkawa (author) (この著者で検索)National Institute for Materials Science Center for Basic Research on Materials/Advanced Materials Characterization Field/Electron Microscopy Group
;
;Susumu Kusanagi (author) (この著者で検索)Sony Semiconductor Solutions Corporation;Ichiro Nomachi (author) (この著者で検索)Sony Semiconductor Solutions Corporation;Ryoji Arai (author) (この著者で検索)Sony Semiconductor Solutions Corporation;Yuya Kanitani (author) (この著者で検索)Sony Semiconductor Solutions CorporationKoji Kimoto (author) (この著者で検索)National Institute for Materials Science Center for Basic Research on Materials
;
Yoshihiro Kudo (author) (この著者で検索)Sony Semiconductor Solutions Corporation - キーワード
- Limit of detection, Detection threshold, Physical analysis, Gallium nitride, Valence electron energy loss spectroscopy (VEELS), Low-loss spectrum
- 刊行年月日
- 2026-01-01
- 更新時刻
- 2026-04-30 12:01:11 +0900
NF3 and F2 gas fluorination of GaN surface and Pt/GaN interface analyzed by hard X-ray photoelectron spectroscopy
- ジャーナル論文
- 著者
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Asahiko Matsuda (author) (この著者で検索)National Institute for Materials Science
;
Takashi Teramoto (author) (この著者で検索)
https://orcid.org/0000-0002-9368-1284
(unauthenticated)
;
Takahiro Nagata (author) (この著者で検索)National Institute for Materials Science
;
Dominic Gerlach (author) (この著者で検索)
https://orcid.org/0000-0003-1859-0750
(unauthenticated)
;
Peng Shen (author) (この著者で検索)
https://orcid.org/0000-0002-1971-5490
(unauthenticated)
;
Shigenori Ueda (author) (この著者で検索)National Institute for Materials Science
;
;Takako Kimura (author) (この著者で検索);Christian Dussarrat (author) (この著者で検索)Toyohiro Chikyow (author) (この著者で検索)
- キーワード
- Fluorination, Surface passivation, hard X-ray photoelectron spectroscopy, Gallium nitride
- 刊行年月日
- 2024-03-19
- 更新時刻
- 2026-03-19 14:27:24 +0900